| PART |
Description |
Maker |
| MB8117405B |
4M X 4-Nit Hyper Page Mode DRAM
|
Fujitsu
|
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| MSM514265B MSM514265BSL |
262,144-Word x 16-Bit DYNAMIC RAM : HYPER PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
|
| HYB3117805BJ-60 HYB3117805BJ-70 HYB3117805BSJ-50- |
2M x 8 - Bit Dynamic RAM 2k Refresh (Hyper Page Mode- EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MB81116822A-84 MB81116822A-125 |
CMOS 2×1M ×8 BIT
Hyper Page Mode Dynamic RAM(CMOS 2×1M ×8位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
| UPD4216805 UPD4216805-50 UPD4216805-60 UPD4216805- |
16M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT, HYPER PAGE MODE
|
NEC
|
| MB81V16165A-70L |
CMOS 1M ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 1M ×16 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB85344C-70 |
CMOS 2M×32 BIT
Hyper Page Mode DRAM Module(CMOS 2M×32超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
| MH16V725BWJ-5 MH16V725BWJ-6 |
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH16V7245BWJ-5 MH16V7245BWJ-6 |
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
|
http://
|
| MH16V6445BWJ-5 MH16V6445BWJ-6 |
HYPER PAGE MODE 1073741824 - BIT ( 16777216 - WORD BY 64 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
